The GR symposium welcomes contributions to III-nitride crystal growth, III-nitride epitaxy, doping and point defects, nitride alloys, and heterostructures as well as growth methods and growth technologies.
Symposium Chairs: Zlatko Sitar, Ramon Collazo (NCSU, USA)
The CR symposium covers investigations of the optical and electronic properties of III-nitrides, structural analysis, defect characterization, nanophotonics, and nanoeletronics as well as theory and simulation.
Symposium Chair: Yoichi Kawakami (Kyoto University, Japan)
The OD symposium welcomes contributions on nitride based light emitters such as micro-LEDs, VCSEL, edge emitting laser diodes, multi -section laser diode, UV-LEDs, UV-laser diodes, single photon emitters, tunnel-junction LEDs, photodetectors, nanophotonic physics and devices, frequency combs, non linear optics, and intersubband emitters as well as device technologies and simulation.
Symposium Chair: Jean Yves Duboz (CRHEA, France)
The ED symposium discusses growth, fabrication, characterization, degradation and simulation of electronic devices for high power switching, high frequency, high temperature, RF applications, including vertical electronic devices, and combination with new materials (e.g. AlN, Ga2O3).
Symposium Chair: Srabanti Chowdhury (Stanford University, USA)
NOVEL MATERIALS AND NANOSTRUCTURES
The NM&NS symposium discusses growth, fabrication, characterization of nanostructures such as nanowires, quantum dots, micropillars, photonic crystals and devices based on these as well as growth and characterization of novel materials such as Boron containing III-nitrides, 2D materials, quaternary InAlGaN, etc.
Symposium Chair: Yasuhiko Arakawa (The University of Tokyo, Japan)